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Femtosecond high-power spontaneous mode-locked operation in vertical-external cavity surface-emitting laser with gigahertz oscillationCHEN, Y. F; LEE, Y. C; LIANG, H. C et al.Optics letters. 2011, Vol 36, Num 23, pp 4581-4583, issn 0146-9592, 3 p.Article

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laserHUANG, S. C; CHANG, H. L; SU, K. W et al.Applied physics. B, Lasers and optics (Print). 2009, Vol 94, Num 3, pp 483-487, issn 0946-2171, 5 p.Article

High-pulse-energy, passively Q-switched Yb-doped fiber laser with AlGaInAs quantum wells as a saturable absorberHUANG, J. Y; HUANG, W. C; ZHUANG, W. Z et al.Optics letters. 2009, Vol 34, Num 15, pp 2360-2362, issn 0146-9592, 3 p.Article

AlGaInAs intracavity selective absorber for an efficient high-power Nd:YAG laser operation at 1.44 μmHUANG, Y. P; CHANG, Y. T; SU, K. W et al.Optics letters. 2008, Vol 33, Num 13, pp 1452-1454, issn 0146-9592, 3 p.Article

Surface KOH treatment in AlGaN-based photodiodesLAN, W.-H; HUANG, K.-C; HUANG, K. F et al.Electronics Letters. 2006, Vol 42, Num 14, pp 821-822, issn 0013-5194, 2 p.Article

Exploring the origin of the directional emission from a microcavity with a large-aperture surface-emitting laserCHEN, Ross C. C; YU, Y. T; HUANG, Y. J et al.Optics letters. 2009, Vol 34, Num 12, pp 1810-1812, issn 0146-9592, 3 p.Article

High-peak-power passively Q-switched Nd:YAG laser at 946 nmHUANG, Y. P; SU, K. W; LI, A et al.Applied physics. B, Lasers and optics (Print). 2008, Vol 91, Num 3-4, pp 429-432, issn 0946-2171, 4 p.Article

Infusion of human umbilical cord blood cells protect against cerebral ischemia and damage during heatstroke in the ratCHEN, S. H; CHANG, F. M; TSAI, Y. C et al.Experimental neurology (Print). 2006, Vol 199, Num 1, pp 67-76, issn 0014-4886, 10 p.Article

High breakdown P-channel InSb MOSFETTU, S. L; LAN, W. H; CHIOU, T. S et al.Japanese journal of applied physics. 1990, Vol 29, Num 3, pp L398-L400, issn 0021-4922, 2Article

Infrared spectroscopic study of mercury-sensitized photo-CVD silicon oxideLAN, W. H; TU, S. L; YANG, S. J et al.Japanese journal of applied physics. 1990, Vol 29, Num 6, pp 997-1003, issn 0021-4922, 7 p., 1Article

Optical studies of InxGa1-xAs/GaAs strained-layer quantum wellsHUANG, K. F; TAI, K; CHU, S. N. G et al.Applied physics letters. 1989, Vol 54, Num 20, pp 2026-2028, issn 0003-6951Article

Non-paraxial contributions to the far-field pattern of surface-emitting lasers: a manifestation of the momentum-space wavefunctions of quantum billiardsYU, Y. T; HUANG, Y. J; CHIANG, P. Y et al.Journal of optics (Print). 2011, Vol 13, Num 7, issn 2040-8978, 075705.1-075705.7Article

Reliability studies of gain-guided 0.85 μm GaAs/AlGaAs quantum well surface emitting lasersWU, C. C; TAI, K; HUANG, T. C et al.IEEE photonics technology letters. 1994, Vol 6, Num 1, pp 37-39, issn 1041-1135Article

Instability in surface emitting lasers due to external optical feedbackCHEN, H. M; TAI, K; HUANG, K. F et al.Journal of applied physics. 1993, Vol 73, Num 1, pp 16-20, issn 0021-8979Article

Two-color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wellsTSAI, K. K; CHANG, K. H; LEE, C. P et al.Applied physics letters. 1993, Vol 62, Num 26, pp 3504-3506, issn 0003-6951Article

Continuous wave visible InGaP/InGaAIP quantum well surface emitting laser diodesTAI, K; HUANG, K. F; WU, C. C et al.Electronics Letters. 1993, Vol 29, Num 15, pp 1314-1316, issn 0013-5194Article

Anomalous diffusion of Cd in InSbTU, S. L; HUANG, K. F; YANG, S. J et al.Japanese journal of applied physics. 1990, Vol 29, Num 3, pp 463-467, issn 0021-4922, 1Article

Room-temperature pseudomorphic InxGa1-xAs/GaAs quantum well surface-emitting lasers at 0.94-1.0 μm wavelengthsHUANG, K. F; TAI, K; JEWELL, J. L et al.Applied physics letters. 1989, Vol 54, Num 22, pp 2192-2194, issn 0003-6951, 3 p.Article

Widely tunable eye-safe laser by a passively Q-switched photonic crystal fiber laser and an external-cavity optical parametric oscillatorCHANG, H. L; ZHUANG, W. Z; HUANG, W. C et al.Laser physics letters (Print). 2011, Vol 8, Num 9, pp 678-683, issn 1612-2011, 6 p.Article

High-peak-power AlGaInAs quantum-well 1.3-μm laser pumped by a diode-pumped actively Q-switched solid-state laserSU, K. W; HUANG, S. C; LI, A et al.Optics letters. 2006, Vol 31, Num 13, pp 2009-2011, issn 0146-9592, 3 p.Article

InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nmSU, K. W; LAI, H. C; LI, A et al.Optics letters. 2005, Vol 30, Num 12, pp 1482-1484, issn 0146-9592, 3 p.Article

Broadly tunable self-starting passively mode-locked Ti:sapphire laser with triple-strained quantum-well saturable Bragg reflectorSHIEH, J.-M; HUANG, T. C; HUANG, K. F et al.Optics communications. 1998, Vol 156, Num 1-3, pp 53-57, issn 0030-4018Article

Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wellsTSAI, K. L; CHANG, K. H; LEE, C. P et al.Journal of applied physics. 1992, Vol 72, Num 6, pp 2449-2452, issn 0021-8979Article

AlGaAs-GaAs and AlGaAs-GaAs-InGaAs vertical cavity surface emitting lasers with Ag mirrorsDEPPE, D. G; CHO, A. Y; HUANG, K. F et al.Journal of applied physics. 1989, Vol 66, Num 11, pp 5629-5631, issn 0021-8979Article

Preparation and characterization of some tin oxide filmsUEN, T. M; HUANG, K. F; CHEN, M. S et al.Thin solid films. 1988, Vol 158, Num 1, pp 69-80, issn 0040-6090Article

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